A 16.6 μW 3.12 MHz RC relaxation oscillator with 160.3 dBc/Hz FOM

This paper presents a new RC relaxation oscillator for biomedical sensor interface circuit. A novel switch-capacitor based RC charging/discharging circuit is proposed to effectively improve the oscillator phase noise and power performance. The inverter-based comparator with replica biasing is employ...

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Main Authors: Zhou, Wei, Goh, Wang Ling, Cheong, Jia Hao, Gao, Yuan
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2020
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Online Access:https://hdl.handle.net/10356/137295
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1372952020-03-16T08:33:14Z A 16.6 μW 3.12 MHz RC relaxation oscillator with 160.3 dBc/Hz FOM Zhou, Wei Goh, Wang Ling Cheong, Jia Hao Gao, Yuan School of Electrical and Electronic Engineering 2018 IEEE International Symposium on Circuits and Systems (ISCAS) Engineering::Electrical and electronic engineering RC Relaxation Oscillator Low Phase Noise This paper presents a new RC relaxation oscillator for biomedical sensor interface circuit. A novel switch-capacitor based RC charging/discharging circuit is proposed to effectively improve the oscillator phase noise and power performance. The inverter-based comparator with replica biasing is employed and optimized to enhance the phase noise performance and to lower output dependence on the supply voltage variation. The oscillator's temperature insensitivity is also improved by resistor temperature compensation. The prototype RC relaxation oscillator circuit is designed in a commercial 65nm CMOS process. The post-layout simulation results showed 3.12 MHz output frequency, -112dBc/Hz phase noise at 100 kHz offset, and 16.6 μW power consumption under 1 V supply voltage. The frequency variation is ±0.294%/V for supply within 1 V to 1.6 V, and 11.31 ppm/°C for temperature across -40°C to 100°C. The overall circuit performance is compared favorably to the state-of-art designs, with an outstanding Figure of Merit (FOM) of 160.03 dBc/Hz at 100 kHz. ASTAR (Agency for Sci., Tech. and Research, S’pore) Accepted version 2020-03-16T08:33:13Z 2020-03-16T08:33:13Z 2018 Conference Paper Zhou, W., Goh, W. L., Cheong, J. H., & Gao, Y. (2018). A 16.6 μW 3.12 MHz RC relaxation oscillator with 160.3 dBc/Hz FOM. IEEE International Symposium on Circuits and Systems (ISCAS), 1-5. doi:10.1109/ISCAS.2018.8350902 9781538648810 https://hdl.handle.net/10356/137295 10.1109/ISCAS.2018.8350902 2-s2.0-85057081582 1 5 en © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/ISCAS.2018.8350902. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
RC Relaxation Oscillator
Low Phase Noise
spellingShingle Engineering::Electrical and electronic engineering
RC Relaxation Oscillator
Low Phase Noise
Zhou, Wei
Goh, Wang Ling
Cheong, Jia Hao
Gao, Yuan
A 16.6 μW 3.12 MHz RC relaxation oscillator with 160.3 dBc/Hz FOM
description This paper presents a new RC relaxation oscillator for biomedical sensor interface circuit. A novel switch-capacitor based RC charging/discharging circuit is proposed to effectively improve the oscillator phase noise and power performance. The inverter-based comparator with replica biasing is employed and optimized to enhance the phase noise performance and to lower output dependence on the supply voltage variation. The oscillator's temperature insensitivity is also improved by resistor temperature compensation. The prototype RC relaxation oscillator circuit is designed in a commercial 65nm CMOS process. The post-layout simulation results showed 3.12 MHz output frequency, -112dBc/Hz phase noise at 100 kHz offset, and 16.6 μW power consumption under 1 V supply voltage. The frequency variation is ±0.294%/V for supply within 1 V to 1.6 V, and 11.31 ppm/°C for temperature across -40°C to 100°C. The overall circuit performance is compared favorably to the state-of-art designs, with an outstanding Figure of Merit (FOM) of 160.03 dBc/Hz at 100 kHz.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Zhou, Wei
Goh, Wang Ling
Cheong, Jia Hao
Gao, Yuan
format Conference or Workshop Item
author Zhou, Wei
Goh, Wang Ling
Cheong, Jia Hao
Gao, Yuan
author_sort Zhou, Wei
title A 16.6 μW 3.12 MHz RC relaxation oscillator with 160.3 dBc/Hz FOM
title_short A 16.6 μW 3.12 MHz RC relaxation oscillator with 160.3 dBc/Hz FOM
title_full A 16.6 μW 3.12 MHz RC relaxation oscillator with 160.3 dBc/Hz FOM
title_fullStr A 16.6 μW 3.12 MHz RC relaxation oscillator with 160.3 dBc/Hz FOM
title_full_unstemmed A 16.6 μW 3.12 MHz RC relaxation oscillator with 160.3 dBc/Hz FOM
title_sort 16.6 μw 3.12 mhz rc relaxation oscillator with 160.3 dbc/hz fom
publishDate 2020
url https://hdl.handle.net/10356/137295
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