Studies of GaN-on-GaN vertical Schottky diodes for radiation sensing applications

• المؤلف الرئيسي: Sandupatla, Abhinay
• مؤلفون آخرون: Ng Geok Ing
• التنسيق: Thesis-Doctor of Philosophy
• اللغة: English
• منشور في: Nanyang Technological University 2020
• الموضوعات: Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/137398
• المؤسسة: Nanyang Technological University

Gallium Nitride (GaN) with its large bandgap, high electron saturation velocity, and critical electric field has been widely applied in the fabrication of illumination, high frequency, and high-power devices. Recently, researchers are exploring radiation sensing as a probable application for GaN dev...