Synthesis of ternary oxide Zn2GeO4 nanowire networks and their deep ultraviolet detection properties

Ternary oxide Zn2GeO4 with a wide bandgap of 4.84 eV, as a candidate for fourth generation semiconductors, has attracted a great deal of attention for deep ultraviolet (DUV) photodetector applications, because it is expected to be blind to the UV-A/B band (290–400 nm) and only responsive to the UV-C...

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Main Authors: Han, Xu, Feng, Shuanglong, Zhao, Yiming, Li, Lei, Zhan, Zhaoyao, Tao, Zhiyong, Fan, Yaxian, Lu, Wenqiang, Zuo, Wenbin, Fu, Dejun
其他作者: School of Mechanical and Aerospace Engineering
格式: Article
語言:English
出版: 2020
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在線閱讀:https://hdl.handle.net/10356/137418
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機構: Nanyang Technological University
語言: English