Study of dark current in mid-infrared InAsSb-based hetero n-i-p photodiode

• المؤلفون الرئيسيون: Suo, Fei, Tong, Jinchao, Qian, Li, Zhang, Dao Hua
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; Dark Current; Activation Energy
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/137634

In this work, we study the dark current characteristics in middle-wavelength infrared photodiodes with a heterojunction n-i-p architecture. The photodiode includes wide bandgap and quaternary layers to reduce the bulk dark current. Photodiodes with square mesa size varying from 500-20 μm are fabrica...