High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode

• Main Authors: Tong, Jinchao, Tobing, Landobasa Y.M., Ni, Peinan, Zhang, Dao Hua
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Middle Wavelength Infrared; InAsSb Based Photodiode; DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/106413; http://hdl.handle.net/10220/47910; http://dx.doi.org/10.1016/j.apsusc.2017.08.177
• Institution: Nanyang Technological University

We present the effect of interface quality on the performance of InAsSb based hetero n-i-p middle wavelength infrared (MWIR) photodiodes. By adopting heavily doping wide bandgap p- and n-type layers and inserting a thin layer between the two doped layers and the absorbing InAsSb region, the interfac...