Dark current analysis of InasSb-based hetero-p-i-n mid-infrared photodiode

We comprehensively study the characteristics of dark current for a p-i-n heterostructure photodiode. To reduce the dark current, a wide-bandgap layer (AlGaSb) and thin quaternary layers (AlInAsSb) are inserted in the heterostructure for blocking the dark carrier diffusion and limiting type-II transi...

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Bibliographic Details
Main Authors: Suo, Fei, Tong, Jinchao, Zhang, Dao Hua
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2021
Subjects:
Online Access:https://hdl.handle.net/10356/154455
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Institution: Nanyang Technological University
Language: English