Interfacial mechanism for efficient resistive switching in Ruddlesden-Popper perovskites for non-volatile memories

• المؤلفون الرئيسيون: Solanki, Ankur, Guerrero, Antonio, Zhang, Qiannan, Bisquert, Juan, Sum, Tze Chien
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Science::Physics; Perovskite; Hysteresis
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/138045

Ion migration, one origin of current-voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered Ruddlesdsen-Popper perovskites (RPPs) and explicate the underlying mechanisms. The ON/...