Interfacial mechanism for efficient resistive switching in Ruddlesden-Popper perovskites for non-volatile memories

• Main Authors: Solanki, Ankur, Guerrero, Antonio, Zhang, Qiannan, Bisquert, Juan, Sum, Tze Chien
• 其他作者: School of Physical and Mathematical Sciences
• 格式: Article
• 語言: English
• 出版: 2020
• 主題: Science::Physics; Perovskite; Hysteresis
• 在線閱讀: https://hdl.handle.net/10356/138045
• 機構: Nanyang Technological University

Ion migration, one origin of current-voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered Ruddlesdsen-Popper perovskites (RPPs) and explicate the underlying mechanisms. The ON/...