A crosstalk-immune sub-THz All-surface-wave I/O transceiver in 65-nm CMOS

A crosstalk-immune sub-THz All-surface-wave I/O transceiver in 65-nm CMOS

A surface-wave I/O transceiver is proposed and validated at 140 GHz in 65 nm CMOS. By generating, modulating and propagating surface plasmonic signal, the all-surface-wave I/O is prototyped with crosstalk-immune owning to the sub-wavelength localization of electromagnetic wave at the metal/dielectri...

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Bibliographic Details
Main Authors: Liang, Yuan, Boon, Chirn Chye, Yu, Hao
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering
CMOS Oscillator
Terahertzes
Online Access:https://hdl.handle.net/10356/138358
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Institution: Nanyang Technological University
Language: English
Description
Summary:A surface-wave I/O transceiver is proposed and validated at 140 GHz in 65 nm CMOS. By generating, modulating and propagating surface plasmonic signal, the all-surface-wave I/O is prototyped with crosstalk-immune owning to the sub-wavelength localization of electromagnetic wave at the metal/dielectric interface. A four-way surface-wave signal source is power-combined via coupled oscillator network. A surface-wave modulator is realized by stacking two split-ring-resonator (SRR) unit-cells with opposite placement. It is further integrated into the all-surface-wave I/O with a surface-wave transmission line and matching converter. Measured results show that the proposed dual-channel I/O delivers a localized 140 GHz surface-wave signal, demonstrating crosstalk-immune on-chip transmission by supporting 13.5 Gb/s data-rate communication with 2.6 PJ/bit Power efficiency and a bit-error rate less than 10^(-12).

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