Performance of AlGaInP LEDs on silicon substrates through low threading dislocation density (TDD) germanium buffer layer

• المؤلفون الرئيسيون: Wang, Yue, Wang, Bing, Eow, Desmond Fu Shen, Michel, Jurgen, Lee, Kenneth Eng Kian, Yoon, Soon Fatt, Fitzgerald, Eugene A., Tan , Chuan Seng, Lee, Kwang Hong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; Low TDD; GOI
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/138538
• المؤسسة: Nanyang Technological University

Performance of GaInP/AlGaInP multi-quantum wells light-emitting diodes (LEDs) grown on low threading dislocation density (TDD) Germanium-on-Silicon (Ge/Si) substrates are compared and studied. Three approaches are used to realize the low TDD Ge/Si substrates. The first approach is the two-step growt...