Performance of AlGaInP LEDs on silicon substrates through low threading dislocation density (TDD) germanium buffer layer

Performance of GaInP/AlGaInP multi-quantum wells light-emitting diodes (LEDs) grown on low threading dislocation density (TDD) Germanium-on-Silicon (Ge/Si) substrates are compared and studied. Three approaches are used to realize the low TDD Ge/Si substrates. The first approach is the two-step growt...

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Bibliographic Details
Main Authors: Wang, Yue, Wang, Bing, Eow, Desmond Fu Shen, Michel, Jurgen, Lee, Kenneth Eng Kian, Yoon, Soon Fatt, Fitzgerald, Eugene A., Tan , Chuan Seng, Lee, Kwang Hong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
Subjects:
GOI
Online Access:https://hdl.handle.net/10356/138538
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Institution: Nanyang Technological University
Language: English

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