Annihilation of threading dislocations in strain relaxed nano-porous GaN template for high quality GaN growth

Annihilation of threading dislocations in strain relaxed nano-porous GaN template for high quality GaN growth

10.1002/pssc.200674706

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Bibliographic Details
Main Authors: Hartono, H., Soh, C.B., Chua, S.J., Fitzgerald, E.A.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83493
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83493

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