Annihilation of threading dislocations in regrown GaN on electrochemically etched nanoporous GaN template with optimization of buffer layer growth

Annihilation of threading dislocations in regrown GaN on electrochemically etched nanoporous GaN template with optimization of buffer layer growth

10.4028/0-87849-471-5.227

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Bibliographic Details
Main Authors: Soh, C.B., Hartono, H., Chow, S.Y., Chua, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/69418
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/69418

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