Annihilation of threading dislocations in regrown GaN on electrochemically etched nanoporous GaN template with optimization of buffer layer growth

Annihilation of threading dislocations in regrown GaN on electrochemically etched nanoporous GaN template with optimization of buffer layer growth

10.4028/0-87849-471-5.227

Saved in:

Bibliographic Details
Main Authors:	Soh, C.B., Hartono, H., Chow, S.Y., Chua, S.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/69418
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Threading dislocations annihilation in regrown GaN film on nanoporous GaN template
by: Soh, C.B., et al.
Published: (2014)

Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth
by: Soh, C.B., et al.
Published: (2016)

Annihilation of threading dislocations in strain relaxed nano-porous GaN template for high quality GaN growth
by: Hartono, H., et al.
Published: (2014)

Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template
by: Hartono, H., et al.
Published: (2014)

High quality GaN grown from a nanoporous GaN template
by: Hartono, H., et al.
Published: (2014)

Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates
by: Soh, C.B., et al.
Published: (2014)

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template
by: Wang, Y.D., et al.
Published: (2014)

Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN
by: Soh, C.B., et al.
Published: (2014)

Dislocation scattering in n-GaN
by: Choi, H.W., et al.
Published: (2014)

Fabrication and characterization of nano-porous GaN template for strain relaxed GaN growth
by: Hartono, H., et al.
Published: (2014)

High optical quality nanoporous GaN prepared by photoelectrochemical etching
by: Vajpeyi, A.P., et al.
Published: (2014)

Nanopore morphology in porous GaN template and its effect on the LEDs emission
by: Soh, C.B., et al.
Published: (2014)

Enhanced luminescence efficiency due to carrier localization in InGaNGaN heterostructures grown on nanoporous GaN templates
by: Soh, C.B., et al.
Published: (2011)

Regrown ohmic contact to GaN-based high electron mobility transistors
by: Tan, Eleen
Published: (2023)

GaN based high mobility electron transistors with regrown ohmic contacts
by: Weng, Don Letian
Published: (2024)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
by: Kyaw, Zabu, et al.
Published: (2014)

Orders of magnitude reduction in threading dislocations in ZnO grown on facet-controlled GaN
by: Chua, S.J., et al.
Published: (2014)

Identification of deep levels in GaN associated with dislocations
by: Soh, C.B., et al.
Published: (2014)

Enhancement of erbium incorporation with implantation into nanoporous GaN
by: Soh, C.B., et al.
Published: (2014)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
by: Sun, Xiaowei, et al.
Published: (2013)

Fabrication and properties of nanoporous GaN films
by: Wang, Y.D., et al.
Published: (2014)

Characterization of high quality continuous GaN films grown on Si-doped cracked GaN template
by: Soh, C.B., et al.
Published: (2014)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
by: Zhang, Zi-Hui, et al.
Published: (2013)

Comparative study of optical properties of nanoporous GaN prepared by uv-assisted electrochemical and electroless etching
by: Vajpeyi, A.P., et al.
Published: (2014)

Exposure of defects in GaN by plasma etching
by: Choi, H.W., et al.
Published: (2014)

Luminescence and vibrational properties of erbium-implanted nanoporous GaN
by: Soh, C.B., et al.
Published: (2014)

Investigation of optical properties of nanoporous GaN films
by: Vajpeyi, A.P., et al.
Published: (2014)

Deep level centers in InGaN/GaN heterostructure grown on sapphire and free-standing GaN
by: Soh, C.B., et al.
Published: (2014)

Growth and Characterization of High Quality Continuous GaN Films on Si-Doped Cracked GaN Templates
by: Chua, S.J., et al.
Published: (2014)

Structural and optical properties of InGaN/GaN multiple quantum wells grown on nano-air-bridged GaN template
by: Zang, K.Y., et al.
Published: (2014)

Etching of GaN using Inductively Coupled Plasma
by: Ramam, A., et al.
Published: (2014)

Optical activation of Eu ions in nanoporous GaN films
by: Vajpeyi, A.P., et al.
Published: (2016)

Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)
by: Lau, Sien Hui
Published: (2020)

Electronic and vibronic properties of n-type GaN: The influence of etching and annealing
by: Tripathy, S., et al.
Published: (2014)

Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
by: Chang, T.-F., et al.
Published: (2016)

Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure
by: Duan, Tian Li, et al.
Published: (2019)

Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
by: Sandupatla, Abhinay, et al.
Published: (2020)

Studies of GaN-on-GaN vertical Schottky diodes for radiation sensing applications
by: Sandupatla, Abhinay
Published: (2020)

Incorporation of self assembled In-rich InGaN nanostructure to achieve redshift in InGaN/GaN heterostructures
by: Soh, C.B., et al.
Published: (2014)

InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization
by: Zhou, H., et al.
Published: (2014)