Rapid thermal processing of GAN-based and ALGAINP-based semiconductors for semiconductor laser applications
This project aimed (1) to establish the relationship between the processing parameters involved in rapid thermal annealing (RTA) and anodic oxide induced intermixing (AOII) and material properties of semiconductor epitaxial layers, and (2) to establish the relationship between the processing paramet...
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Main Authors: | , , , , |
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Other Authors: | |
Format: | Research Report |
Published: |
2008
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Subjects: | |
Online Access: | http://hdl.handle.net/10356/6777 |
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Institution: | Nanyang Technological University |