Rapid thermal processing of GAN-based and ALGAINP-based semiconductors for semiconductor laser applications

• المؤلفون الرئيسيون: Yuan, Shu, Hing, Peter, Ooi, B. S., Zhang, Dao Hua, Chua, Soon Jun
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: Research Report
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/6777
• المؤسسة: Nanyang Technological University

This project aimed (1) to establish the relationship between the processing parameters involved in rapid thermal annealing (RTA) and anodic oxide induced intermixing (AOII) and material properties of semiconductor epitaxial layers, and (2) to establish the relationship between the processing paramet...