Rapid thermal processing of GAN-based and ALGAINP-based semiconductors for semiconductor laser applications

This project aimed (1) to establish the relationship between the processing parameters involved in rapid thermal annealing (RTA) and anodic oxide induced intermixing (AOII) and material properties of semiconductor epitaxial layers, and (2) to establish the relationship between the processing paramet...

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Bibliographic Details
Main Authors:	Yuan, Shu, Hing, Peter, Ooi, B. S., Zhang, Dao Hua, Chua, Soon Jun
Other Authors:	School of Materials Science & Engineering
Format:	Research Report
Published:	2008
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:	http://hdl.handle.net/10356/6777
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-6777
record_format	dspace
spelling	sg-ntu-dr.10356-67772023-07-08T06:39:49Z Rapid thermal processing of GAN-based and ALGAINP-based semiconductors for semiconductor laser applications Yuan, Shu Hing, Peter Ooi, B. S. Zhang, Dao Hua Chua, Soon Jun School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films This project aimed (1) to establish the relationship between the processing parameters involved in rapid thermal annealing (RTA) and anodic oxide induced intermixing (AOII) and material properties of semiconductor epitaxial layers, and (2) to establish the relationship between the processing parameters involved in RTA and AOII and device performance of LEDs and laser diodes. RG 5/99 2008-09-17T14:24:42Z 2008-09-17T14:24:42Z 2003 2003 Research Report http://hdl.handle.net/10356/6777 Nanyang Technological University 215 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Yuan, Shu Hing, Peter Ooi, B. S. Zhang, Dao Hua Chua, Soon Jun Rapid thermal processing of GAN-based and ALGAINP-based semiconductors for semiconductor laser applications
description	This project aimed (1) to establish the relationship between the processing parameters involved in rapid thermal annealing (RTA) and anodic oxide induced intermixing (AOII) and material properties of semiconductor epitaxial layers, and (2) to establish the relationship between the processing parameters involved in RTA and AOII and device performance of LEDs and laser diodes.
author2	School of Materials Science & Engineering
author_facet	School of Materials Science & Engineering Yuan, Shu Hing, Peter Ooi, B. S. Zhang, Dao Hua Chua, Soon Jun
format	Research Report
author	Yuan, Shu Hing, Peter Ooi, B. S. Zhang, Dao Hua Chua, Soon Jun
author_sort	Yuan, Shu
title	Rapid thermal processing of GAN-based and ALGAINP-based semiconductors for semiconductor laser applications
title_short	Rapid thermal processing of GAN-based and ALGAINP-based semiconductors for semiconductor laser applications
title_full	Rapid thermal processing of GAN-based and ALGAINP-based semiconductors for semiconductor laser applications
title_fullStr	Rapid thermal processing of GAN-based and ALGAINP-based semiconductors for semiconductor laser applications
title_full_unstemmed	Rapid thermal processing of GAN-based and ALGAINP-based semiconductors for semiconductor laser applications
title_sort	rapid thermal processing of gan-based and algainp-based semiconductors for semiconductor laser applications
publishDate	2008
url	http://hdl.handle.net/10356/6777
_version_	1772827703171350528

Rapid thermal processing of GAN-based and ALGAINP-based semiconductors for semiconductor laser applications

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