Design, fabrication and optimization of integrated circuits for wafer-scale 2D materials electronics

• Main Author: Lim, Joshua Jun Chao
• Other Authors: Tay Beng Kang
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2020
• Subjects: Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/138723
• Institution: Nanyang Technological University

The discovery of graphene in 2004 has sparked widespread interest into inorganic 2-dimensional (2D) materials. Amongst which, transition metal dichalcogenides (TMDs) have garnered great attention as possible replacements to the mainstream silicon-based transistors, due to their unique properties such as the transition from indirect bandgap in bulk to direct bandgap in single layers. This propels their usefulness in a wide variety of electronic applications, including transistors, photodetectors and flexible electronics. One of such TMD is molybdenum disulphide (MoS2) with excellent electrical and optical properties, allowing MoS2 devices to overcome short-channel effects which plague traditional silicon-based transistors as devices scale down, in order to continue Moore’s Law. This final year project explores the potential of ultrathin TMDs for their use in the field of nanoelectronics, and the future Integrated Circuit (IC) industry. The properties and synthesis methods of MoS2 will be reviewed and elaborated on, and transistors will be designed based on MoS2. Lastly, multiple circuit layouts, including combinational and sequential logic, will be created based on these transistors to further determine on the feasibility for use in sub-nanometer nodes in the future IC industry.