Structural and surface characterization of wide band gap semiconductors for high-speed transistor applications
This report presents the research and characterization work during the final year project. The project focuses on the structural and electrical characterization of AlN/GaN/AlN (AGA) double-heterojunction high electron mobility (HEMT) heterostructures on SiC substrates, and simulation of AGA HEMTs as...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project |
| Language: | English |
| Published: |
Nanyang Technological University
2020
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/139404 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |