Structural and surface characterization of wide band gap semiconductors for high-speed transistor applications

This report presents the research and characterization work during the final year project. The project focuses on the structural and electrical characterization of AlN/GaN/AlN (AGA) double-heterojunction high electron mobility (HEMT) heterostructures on SiC substrates, and simulation of AGA HEMTs as...

Full description

Saved in:
Bibliographic Details
Main Author: Chen, Kai
Other Authors: Radhakrishnan K
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2020
Subjects:
Online Access:https://hdl.handle.net/10356/139404
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Be the first to leave a comment!
You must be logged in first