Structural and surface characterization of wide band gap semiconductors for high-speed transistor applications

• Main Author: Chen, Kai
• Other Authors: Radhakrishnan K
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2020
• Subjects: Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/139404
• Institution: Nanyang Technological University

This report presents the research and characterization work during the final year project. The project focuses on the structural and electrical characterization of AlN/GaN/AlN (AGA) double-heterojunction high electron mobility (HEMT) heterostructures on SiC substrates, and simulation of AGA HEMTs as...