Nonvolatile tri-state resistive memory behavior of a stable pyrene-fused N-heteroacene with ten linearly-annulated rings
The diverse functionalities of large N-heteroacenes continue to be developed in terms of their strategic synthesis and application in the organic electronic field. Here, we report a novel large stable pyrene-containing N-heteroacene with ten linearly-annulated rings in one row. Remarkably, it exhibi...
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| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/139410 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | The diverse functionalities of large N-heteroacenes continue to be developed in terms of their strategic synthesis and application in the organic electronic field. Here, we report a novel large stable pyrene-containing N-heteroacene with ten linearly-annulated rings in one row. Remarkably, it exhibited excellent tri-state resistive memory property, which held great promise to achieve ultrahigh-density data storage. To the best of our knowledge, it is the first demonstration of organic multistate memory device based on large N-heteroacene (n≥10), which provides guidelines for designing more proof-of-concept larger N-heteroacene-based memory electronics. |
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