Nonvolatile tri-state resistive memory behavior of a stable pyrene-fused N-heteroacene with ten linearly-annulated rings

• Main Authors: Li, Yang, Zhang, Cheng, Gu, Peiyang, Wang, Zilong, Li, Zhengqiang, Li, Hua, Lu, Jianmei, Zhang, Qichun
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Materials; Conjugation; Heterocycles
• Online Access: https://hdl.handle.net/10356/139410
• Institution: Nanyang Technological University

The diverse functionalities of large N-heteroacenes continue to be developed in terms of their strategic synthesis and application in the organic electronic field. Here, we report a novel large stable pyrene-containing N-heteroacene with ten linearly-annulated rings in one row. Remarkably, it exhibited excellent tri-state resistive memory property, which held great promise to achieve ultrahigh-density data storage. To the best of our knowledge, it is the first demonstration of organic multistate memory device based on large N-heteroacene (n≥10), which provides guidelines for designing more proof-of-concept larger N-heteroacene-based memory electronics.