Thickness effect of nickel oxide thin films on associated solution-processed write-once-read-many-times memory devices

• Main Authors: Wang, Xiao Lin, Liu, Zhen, Wen, Chao, Liu, Yang, Wang, Hong Zhe, Chen, Tu Pei, Zhang, Hai Yan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Nickel; Memory Devices
• Online Access: https://hdl.handle.net/10356/139549
• Institution: Nanyang Technological University

With self-prepared nickel acetate based solution, NiO thin films with different thicknesses have been fabricated by spin coating followed by thermal annealing. By forming a two-terminal Ag/NiO/ITO structure on glass, write-once-read-many-times (WORM) memory devices are realized. The WORM memory beha...