Non-volatile organic transistor memory based on black phosphorus quantum dots as charge trapping layer
High performance organic nano-floating gate transistor memory (NFGTM) has important prerequisites of low processing temperature, solution–processable layers and charge trapping medium with high storage capacity. We demonstrate organic NFGTM using black phosphorus quantum dots (BPQDs) as a charge tra...
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sg-ntu-dr.10356-1403312021-01-21T08:38:25Z Non-volatile organic transistor memory based on black phosphorus quantum dots as charge trapping layer Kumari, Priyanka Ko, Jieun Rao, V. Ramgopal Mhaisalkar, Subodh Leong, Wei Lin School of Electrical and Electronic Engineering School of Materials Science and Engineering Energy Research Institute @ NTU (ERI@N) Engineering::Electrical and electronic engineering Black Phosphorus Quantum Dots High performance organic nano-floating gate transistor memory (NFGTM) has important prerequisites of low processing temperature, solution–processable layers and charge trapping medium with high storage capacity. We demonstrate organic NFGTM using black phosphorus quantum dots (BPQDs) as a charge trapping medium by simple spin-coating and low processing temperature (< 120 °C). The BPQDs with diameter of 12.6 ± 1.5 nm and large quantum confined bandgap of ~2.9 eV possess good charge trapping ability. The organic memory device exhibits excellent memory performance with a large memory window of 61.3 V, write-read-erase-read cycling endurance of 10 3 for more than 180 cycles and reliable retention over 10,000 sec. In addition, we successfully improved the memory retention to ON/OFF current ratio > 10 4 over 10,000 sec by introducing PMMA as the tunneling layer. ASTAR (Agency for Sci., Tech. and Research, S’pore) MOE (Min. of Education, S’pore) Accepted version 2020-05-28T03:43:12Z 2020-05-28T03:43:12Z 2020 Journal Article Kumari, P., Ko, J., Rao, V. R., Mhaisalkar, S., & Leong, W. L. (2020). Non-volatile organic transistor memory based on black phosphorus quantum dots as charge trapping layer. IEEE Electron Device Letters, 41(6), 852 - 855. doi:10.1109/LED.2020.2991157 0741-3106 https://hdl.handle.net/10356/140331 10.1109/LED.2020.2991157 6 41 852 855 en IEEE Electron Device Letters https://doi.org/10.21979/N9/DEL6G7 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/LED.2020.2991157. application/pdf |
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Engineering::Electrical and electronic engineering Black Phosphorus Quantum Dots Kumari, Priyanka Ko, Jieun Rao, V. Ramgopal Mhaisalkar, Subodh Leong, Wei Lin Non-volatile organic transistor memory based on black phosphorus quantum dots as charge trapping layer |
| description |
High performance organic nano-floating gate transistor memory (NFGTM) has important prerequisites of low processing temperature, solution–processable layers and charge trapping medium with high storage capacity. We demonstrate organic NFGTM using black phosphorus quantum dots (BPQDs) as a charge trapping medium by simple spin-coating and low processing temperature (< 120 °C). The BPQDs with diameter of 12.6 ± 1.5 nm and large quantum confined bandgap of ~2.9 eV possess good charge trapping ability. The organic memory device exhibits excellent memory performance with a large memory window of 61.3 V, write-read-erase-read cycling endurance of 10 3 for more than 180 cycles and reliable retention over 10,000 sec. In addition, we successfully improved the memory retention to ON/OFF current ratio > 10 4 over 10,000 sec by introducing PMMA as the tunneling layer. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Kumari, Priyanka Ko, Jieun Rao, V. Ramgopal Mhaisalkar, Subodh Leong, Wei Lin |
| format |
Article |
| author |
Kumari, Priyanka Ko, Jieun Rao, V. Ramgopal Mhaisalkar, Subodh Leong, Wei Lin |
| author_sort |
Kumari, Priyanka |
| title |
Non-volatile organic transistor memory based on black phosphorus quantum dots as charge trapping layer |
| title_short |
Non-volatile organic transistor memory based on black phosphorus quantum dots as charge trapping layer |
| title_full |
Non-volatile organic transistor memory based on black phosphorus quantum dots as charge trapping layer |
| title_fullStr |
Non-volatile organic transistor memory based on black phosphorus quantum dots as charge trapping layer |
| title_full_unstemmed |
Non-volatile organic transistor memory based on black phosphorus quantum dots as charge trapping layer |
| title_sort |
non-volatile organic transistor memory based on black phosphorus quantum dots as charge trapping layer |
| publishDate |
2020 |
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https://hdl.handle.net/10356/140331 https://doi.org/10.21979/N9/DEL6G7 |
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