Non-volatile organic transistor memory based on black phosphorus quantum dots as charge trapping layer

• Main Authors: Kumari, Priyanka, Ko, Jieun, Rao, V. Ramgopal, Mhaisalkar, Subodh, Leong, Wei Lin
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Black Phosphorus; Quantum Dots
• Online Access: https://hdl.handle.net/10356/140331; https://doi.org/10.21979/N9/DEL6G7
• Institution: Nanyang Technological University

High performance organic nano-floating gate transistor memory (NFGTM) has important prerequisites of low processing temperature, solution–processable layers and charge trapping medium with high storage capacity. We demonstrate organic NFGTM using black phosphorus quantum dots (BPQDs) as a charge tra...