Non-volatile organic transistor memory based on black phosphorus quantum dots as charge trapping layer

• المؤلفون الرئيسيون: Kumari, Priyanka, Ko, Jieun, Rao, V. Ramgopal, Mhaisalkar, Subodh, Leong, Wei Lin
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; Black Phosphorus; Quantum Dots
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/140331; https://doi.org/10.21979/N9/DEL6G7
• المؤسسة: Nanyang Technological University

High performance organic nano-floating gate transistor memory (NFGTM) has important prerequisites of low processing temperature, solution–processable layers and charge trapping medium with high storage capacity. We demonstrate organic NFGTM using black phosphorus quantum dots (BPQDs) as a charge tra...