Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by Raman spectroscopy

Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by Raman spectroscopy

Various combinations of interlayer shear modes emerge in few-layer molybdenum diselenide grown by chemical vapor deposition depending on the stacking configuration of the sample. Raman measurements may also reveal polytypism and stacking faults, as supported by first principles calculations and high...

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Bibliographic Details
Main Authors: Lu, Xin, Muhammad Iqbal Bakti Utama, Lin, Junhao, Luo, Xin, Zhao, Yanyuan, Zhang, Jun, Pantelides, Sokrates T., Zhou, Wu, Quek, Su Ying, Xiong, Qihua
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
Subjects:
Science::Physics
Molybdenum Diselenide (MoSe2)
Few-layer
Online Access:https://hdl.handle.net/10356/140374
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Institution: Nanyang Technological University
Language: English
Description
Summary:Various combinations of interlayer shear modes emerge in few-layer molybdenum diselenide grown by chemical vapor deposition depending on the stacking configuration of the sample. Raman measurements may also reveal polytypism and stacking faults, as supported by first principles calculations and high-resolution transmission electron microscopy. Thus, Raman spectroscopy is an important tool in probing stacking-dependent properties in few-layer 2D materials.

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