Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by Raman spectroscopy

Various combinations of interlayer shear modes emerge in few-layer molybdenum diselenide grown by chemical vapor deposition depending on the stacking configuration of the sample. Raman measurements may also reveal polytypism and stacking faults, as supported by first principles calculations and high...

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Main Authors: Lu, Xin, Muhammad Iqbal Bakti Utama, Lin, Junhao, Luo, Xin, Zhao, Yanyuan, Zhang, Jun, Pantelides, Sokrates T., Zhou, Wu, Quek, Su Ying, Xiong, Qihua
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
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Online Access:https://hdl.handle.net/10356/140374
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1403742023-02-28T19:24:56Z Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by Raman spectroscopy Lu, Xin Muhammad Iqbal Bakti Utama Lin, Junhao Luo, Xin Zhao, Yanyuan Zhang, Jun Pantelides, Sokrates T. Zhou, Wu Quek, Su Ying Xiong, Qihua School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences Nanoelectronics Centre of Excellence Science::Physics Molybdenum Diselenide (MoSe2) Few-layer Various combinations of interlayer shear modes emerge in few-layer molybdenum diselenide grown by chemical vapor deposition depending on the stacking configuration of the sample. Raman measurements may also reveal polytypism and stacking faults, as supported by first principles calculations and high-resolution transmission electron microscopy. Thus, Raman spectroscopy is an important tool in probing stacking-dependent properties in few-layer 2D materials. NRF (Natl Research Foundation, S’pore) MOE (Min. of Education, S’pore) Accepted version 2020-05-28T06:12:22Z 2020-05-28T06:12:22Z 2015 Journal Article Lu, X., Muhammad Iqbal Bakti Utama, Lin, J., Luo, X., Zhao, Y., Zhang, J., . . . Xiong, Q. (2015). Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by Raman spectroscopy. Advanced Materials, 27(30), 4502-4508. doi:10.1002/adma.201501086 0935-9648 https://hdl.handle.net/10356/140374 10.1002/adma.201501086 26134241 2-s2.0-84938745930 30 27 4502 4508 en Advanced Materials This is the accepted version of the following article: Lu, X., Muhammad Iqbal Bakti Utama, Lin, J., Luo, X., Zhao, Y., Zhang, J., . . . Xiong, Q. (2015). Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by Raman spectroscopy. Advanced Materials, 27(30), 4502-4508, which has been published in final form at https://doi.org/10.1002/adma.201501086. This article may be used for non-commercial purposes in accordance with the Wiley Self-Archiving Policy [https://authorservices.wiley.com/authorresources/Journal-Authors/licensing/self-archiving.html]. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Science::Physics
Molybdenum Diselenide (MoSe2)
Few-layer
spellingShingle Science::Physics
Molybdenum Diselenide (MoSe2)
Few-layer
Lu, Xin
Muhammad Iqbal Bakti Utama
Lin, Junhao
Luo, Xin
Zhao, Yanyuan
Zhang, Jun
Pantelides, Sokrates T.
Zhou, Wu
Quek, Su Ying
Xiong, Qihua
Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by Raman spectroscopy
description Various combinations of interlayer shear modes emerge in few-layer molybdenum diselenide grown by chemical vapor deposition depending on the stacking configuration of the sample. Raman measurements may also reveal polytypism and stacking faults, as supported by first principles calculations and high-resolution transmission electron microscopy. Thus, Raman spectroscopy is an important tool in probing stacking-dependent properties in few-layer 2D materials.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Lu, Xin
Muhammad Iqbal Bakti Utama
Lin, Junhao
Luo, Xin
Zhao, Yanyuan
Zhang, Jun
Pantelides, Sokrates T.
Zhou, Wu
Quek, Su Ying
Xiong, Qihua
format Article
author Lu, Xin
Muhammad Iqbal Bakti Utama
Lin, Junhao
Luo, Xin
Zhao, Yanyuan
Zhang, Jun
Pantelides, Sokrates T.
Zhou, Wu
Quek, Su Ying
Xiong, Qihua
author_sort Lu, Xin
title Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by Raman spectroscopy
title_short Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by Raman spectroscopy
title_full Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by Raman spectroscopy
title_fullStr Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by Raman spectroscopy
title_full_unstemmed Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by Raman spectroscopy
title_sort rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by raman spectroscopy
publishDate 2020
url https://hdl.handle.net/10356/140374
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