Atomic-scale mechanisms of defect- and light-induced oxidation and degradation of InSe

• Main Authors: Kistanov, Andrey A., Cai, Yongqing, Zhou, Kun, Dmitriev, Sergey V., Zhang, Yong-Wei
• Other Authors: School of Mechanical and Aerospace Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Mechanical engineering; Atomic-scale Mechanisms; Layered Indium Selenide (InSe)
• Online Access: https://hdl.handle.net/10356/140634
• Institution: Nanyang Technological University

Layered indium selenide (InSe), a new two-dimensional (2D) material with a hexagonal structure and semiconducting characteristics, is gaining increasing attention owing to its intriguing electronic properties. Here, by using first-principles calculations, we reveal that perfect InSe possesses high c...