Simulation and optimization of silicon carbide metal oxide semiconductor field effect transistors

• المؤلف الرئيسي: Zhu,Taolue
• مؤلفون آخرون: Rusli
• التنسيق: Thesis-Master by Coursework
• اللغة: English
• منشور في: Nanyang Technological University 2020
• الموضوعات: Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/141066

Silicon carbide (SiC), due to its large band gap, high critical breakdown electric field, carrier saturation velocity and thermal conductivity, has been the best choice of material for the fabrication of high power, high temperature and high frequency semiconductor devices. SiC can also be processed...