Simulation and optimization of silicon carbide metal oxide semiconductor field effect transistors
Silicon carbide (SiC), due to its large band gap, high critical breakdown electric field, carrier saturation velocity and thermal conductivity, has been the best choice of material for the fabrication of high power, high temperature and high frequency semiconductor devices. SiC can also be processed...
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| 格式: | Thesis-Master by Coursework |
| 語言: | English |
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Nanyang Technological University
2020
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/141066 |
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