RF performance of a highly linear power amplifier EDNMOS transistor on trap-rich SOI

RF performance of a highly linear power amplifier EDNMOS transistor on trap-rich SOI

Results specific to power amplifiers (PAs) designed using a SOI EDNMOS transistor free of kinks in ID-VD plane and high breakdown voltage are presented. The suppression of the drain current kink and improvement in breakdown voltage are achieved by the omission of the N+ source implant step. Instead,...

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Main Authors: Toh, Rui Tze, Ang, Diing Shenp, Parthasarathy, Shyam, Wong, Jen Shuang, Yap, Hin Kiong, Zhang, Shaoqiang
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering
EDMOS
Kink Effect
Online Access:https://hdl.handle.net/10356/141467
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1414672020-06-08T09:19:10Z RF performance of a highly linear power amplifier EDNMOS transistor on trap-rich SOI Toh, Rui Tze Ang, Diing Shenp Parthasarathy, Shyam Wong, Jen Shuang Yap, Hin Kiong Zhang, Shaoqiang School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering EDMOS Kink Effect Results specific to power amplifiers (PAs) designed using a SOI EDNMOS transistor free of kinks in ID-VD plane and high breakdown voltage are presented. The suppression of the drain current kink and improvement in breakdown voltage are achieved by the omission of the N+ source implant step. Instead, the source junction is realized by an optimized NLDD implant step only, allowing the formation of an under-source body contact. This approach is highly suitable for integration with RF switch and low-noise amplifiers on the same thin film SOI substrate. The improved channel conductance is found to give rise to highly linear amplitude and phase characteristics under high power conditions when the optimized EDNMOS device is used standalone as a PA. EDB (Economic Devt. Board, S’pore) 2020-06-08T09:19:09Z 2020-06-08T09:19:09Z 2018 Journal Article Toh, R. T., Ang, D. S., Parthasarathy, S., Wong, J. S., Yap, H. K., & Zhang, S. (2018). RF performance of a highly linear power amplifier EDNMOS transistor on trap-rich SOI. IEEE Electron Device Letters, 39(9), 1346-1349. doi:10.1109/LED.2018.2855442 0741-3106 https://hdl.handle.net/10356/141467 10.1109/LED.2018.2855442 2-s2.0-85050001948 9 39 1346 1349 en IEEE Electron Device Letters © 2018 IEEE. All rights reserved.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
EDMOS
Kink Effect
spellingShingle Engineering::Electrical and electronic engineering
EDMOS
Kink Effect
Toh, Rui Tze
Ang, Diing Shenp
Parthasarathy, Shyam
Wong, Jen Shuang
Yap, Hin Kiong
Zhang, Shaoqiang
RF performance of a highly linear power amplifier EDNMOS transistor on trap-rich SOI
description Results specific to power amplifiers (PAs) designed using a SOI EDNMOS transistor free of kinks in ID-VD plane and high breakdown voltage are presented. The suppression of the drain current kink and improvement in breakdown voltage are achieved by the omission of the N+ source implant step. Instead, the source junction is realized by an optimized NLDD implant step only, allowing the formation of an under-source body contact. This approach is highly suitable for integration with RF switch and low-noise amplifiers on the same thin film SOI substrate. The improved channel conductance is found to give rise to highly linear amplitude and phase characteristics under high power conditions when the optimized EDNMOS device is used standalone as a PA.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Toh, Rui Tze
Ang, Diing Shenp
Parthasarathy, Shyam
Wong, Jen Shuang
Yap, Hin Kiong
Zhang, Shaoqiang
format Article
author Toh, Rui Tze
Ang, Diing Shenp
Parthasarathy, Shyam
Wong, Jen Shuang
Yap, Hin Kiong
Zhang, Shaoqiang
author_sort Toh, Rui Tze
title RF performance of a highly linear power amplifier EDNMOS transistor on trap-rich SOI
title_short RF performance of a highly linear power amplifier EDNMOS transistor on trap-rich SOI
title_full RF performance of a highly linear power amplifier EDNMOS transistor on trap-rich SOI
title_fullStr RF performance of a highly linear power amplifier EDNMOS transistor on trap-rich SOI
title_full_unstemmed RF performance of a highly linear power amplifier EDNMOS transistor on trap-rich SOI
title_sort rf performance of a highly linear power amplifier ednmos transistor on trap-rich soi
publishDate 2020
url https://hdl.handle.net/10356/141467
_version_ 1681058402998943744

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