RF performance of a highly linear power amplifier EDNMOS transistor on trap-rich SOI

• Main Authors: Toh, Rui Tze, Ang, Diing Shenp, Parthasarathy, Shyam, Wong, Jen Shuang, Yap, Hin Kiong, Zhang, Shaoqiang
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; EDMOS; Kink Effect
• Online Access: https://hdl.handle.net/10356/141467
• Institution: Nanyang Technological University

Results specific to power amplifiers (PAs) designed using a SOI EDNMOS transistor free of kinks in ID-VD plane and high breakdown voltage are presented. The suppression of the drain current kink and improvement in breakdown voltage are achieved by the omission of the N+ source implant step. Instead,...