On the area scalability of valence-change memristors for neuromorphic computing

• Main Authors: Ang, Diing Shenp, Zhou, Yu, Yew, Kwang Sing, Berco, Dan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Artificial Neural Networks; Atomic Force Microscopy
• Online Access: https://hdl.handle.net/10356/143153
• Institution: Nanyang Technological University

The ability to vary the conductance of a valence-change memristor in a continuous manner makes it a prime choice as an artificial synapse in neuromorphic systems. Because synapses are the most numerous components in the brain, exceeding the neurons by several orders of magnitude, the scalability of...