Silicon-on-insulator free-carrier injection modulators for the mid-infrared

Silicon-on-insulator free-carrier injection modulators for the mid-infrared

Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 μm are presented. PIN diodes are used to inject carriers into the waveguides, and are configured to (a) use free-carrier electroabsorption to create a variable optical attenuator with...

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Bibliographic Details
Main Authors: Nedeljkovic, Milos, Littlejohns, Callum George, Khokhar, Ali Z., Banakar, Mehdi, Cao, Wei, Penades, Jordi Soler, Tran, David T., Gardes, Frederic Y., Thomson, David J., Reed, Graham T., Wang, Hong, Mashanovich, Goran Z.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering
Electromagnetic Wave Attenuation
Modulation
Online Access:https://hdl.handle.net/10356/143567
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Institution: Nanyang Technological University
Language: English
Description
Summary:Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 μm are presented. PIN diodes are used to inject carriers into the waveguides, and are configured to (a) use free-carrier electroabsorption to create a variable optical attenuator with 34 dB modulation depth and (b) use free-carrier electrorefraction with the PIN diodes acting as phase shifters in a Mach-Zehnder interferometer, achieving a VπLπ of 0.052  V·mm and a DC modulation depth of 22 dB. Modulation is demonstrated at data rates up to 125 Mbit/s.

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