Stacking-dependent interlayer phonons in 3R and 2H MoS2

Stacking-dependent interlayer phonons in 3R and 2H MoS2

We have investigated the interlayer shear and breathing phonon modes in MoS2 with pure 3R and 2H stacking order by using polarization-dependent ultralow-frequency Raman spectroscopy. We observe up to three shear branches and four breathing branches in MoS2 with thickness from 2 to 13 layers. The bre...

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書目詳細資料
Main Authors:	Van Baren, Jeremiah, Ye, Gaihua, Yan, Jia-An, Ye, Zhipeng, Rezaie, Pouyan, Yu, Peng, Liu, Zheng, He, Rui, Lui, Chun Hung
其他作者:	School of Materials Science and Engineering
格式:	Article
語言:	English
出版:	2020
主題:	Engineering::Materials 3R MoS2 2H MoS2
在線閱讀:	https://hdl.handle.net/10356/143595
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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