Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors
Amorphous oxide semiconductors have drawn considerable attention as a replacement for ubiquitous silicon based technologies. By virtue of their flexible substrate compatibility and transparency, amorphous metal oxide semiconductor (AOS) thin film transistors (TFTs) are being explored in emerging fle...
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Main Authors: | , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2020
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/143736 |
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Institution: | Nanyang Technological University |
Language: | English |
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