High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection
The development of infrared photodetectors is mainly limited by the choice of available materials and the intricate crystal growth process. Moreover, thermally activated carriers in traditional III-V and II-VI semiconductors enforce low operating temperatures in the infrared photodetectors. Here we...
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Main Authors: | Lukman, Steven, Ding, Lu, Xu, Lei, Tao, Ye, Riis-Jensen, Anders C., Zhang, Gang, Wu, Steve Qing Yang, Yang, Ming, Luo, Sheng, Hsu, Chuanghan, Yao, Liangzi, Liang, Gengchiau, Lin, Hsin, Zhang, Yong-Wei, Thygesen, Kristian S., Wang, Qi Jie, Feng, Yuanping, Teng, Jinghua |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2020
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/144025 |
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Institution: | Nanyang Technological University |
Language: | English |
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