High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection
The development of infrared photodetectors is mainly limited by the choice of available materials and the intricate crystal growth process. Moreover, thermally activated carriers in traditional III-V and II-VI semiconductors enforce low operating temperatures in the infrared photodetectors. Here we...
Saved in:
Main Authors: | , , , , , , , , , , , , , , , , , |
---|---|
其他作者: | |
格式: | Article |
語言: | English |
出版: |
2020
|
主題: | |
在線閱讀: | https://hdl.handle.net/10356/144025 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|