Equivalent circuit model of high power density SiC converter for common-mode conducted emission prediction and analysis

• Main Authors: Liu, Yong, See, Kye Yak, Yin, Shan, Simanjorang, Rejeki, Gupta, Amit K., Lai, Jih-Sheng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; High Power Density Converter; LCL Filter
• Online Access: https://hdl.handle.net/10356/144381
• Institution: Nanyang Technological University

High power density is the primary design consideration for power converters in more electric aircraft (MEA) to meet both space and weight requirements. Therefore, wide bandgap (WBG) semiconductor switching devices, such as SiC, have been chosen to push the switching frequency of the power converter further for size and weight reduction. To meet power quality and conducted emission requirements, a LCL filter is necessary between the converter output and the power grid. With the power switching devices operating at higher frequency, the parasitic effects of various key circuits of the converter cannot be ignored and must be accounted for in the simulation model. This paper describes a complete equivalent circuit model that includes these effects of DC bus-bar, power semiconductor device, gate driver and LCL filter. With the comprehensive model, common-mode (CM) conducted emissions can be predicted and evaluated during the design phase for performance optimization purpose.