Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS

This work presents a compact switched-capacitor power detector (PD) with frequency compensation technique in a 65-nm CMOS process. Utilizing self-biased MOSFET as switches, the PD works both at the positive and the negative cycle to increase the dynamic range (DR). The output of traditional power de...

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Main Authors: Li, Chenyang, Boon, Chirn Chye, Yi, Xiang, Liang, Zhipeng, Yang, Kaituo
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
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Online Access:https://hdl.handle.net/10356/144725
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1447252020-11-20T08:11:06Z Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS Li, Chenyang Boon, Chirn Chye Yi, Xiang Liang, Zhipeng Yang, Kaituo School of Electrical and Electronic Engineering VIRTUS, IC Design Centre of Excellence Engineering::Electrical and electronic engineering CMOS Power Detector Dynamic Range This work presents a compact switched-capacitor power detector (PD) with frequency compensation technique in a 65-nm CMOS process. Utilizing self-biased MOSFET as switches, the PD works both at the positive and the negative cycle to increase the dynamic range (DR). The output of traditional power detectors usually change with the variations of input frequencies which make the measurement of PD more difficult. In this design, by adding a feed-forward frequency detection circuit, the load resistors of the power detector are changed according to the input frequencies. Thus, the effect of input frequency variation is minimized. The measured operation frequency of the power detector is from 3 GHz to 5 GHz with a dynamic range of 20 dB with an error of ±2 dB. The variations of the output voltage are reduced from more than 4 dB to ±0.5 dB, achieving a variation of less than ±0.25 dB/GHz. To the authors' knowledge, it is the first power detector with input frequency compensation. The core of the power detector occupies an area of 0.014mm 2 and consumes 2.04mW static power. Published version 2020-11-20T08:11:06Z 2020-11-20T08:11:06Z 2020 Journal Article Li, C., Boon, C. C., Yi, X., Liang, Z., & Yang, K. (2020). Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS. IEEE Access, 8, 34197-34203. doi:10.1109/ACCESS.2020.2974514 2169-3536 https://hdl.handle.net/10356/144725 10.1109/ACCESS.2020.2974514 8 34197 34203 en IEEE Access © 2020 The Author(s). This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see http://creativecommons.org/licenses/by/4.0/ application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
CMOS Power Detector
Dynamic Range
spellingShingle Engineering::Electrical and electronic engineering
CMOS Power Detector
Dynamic Range
Li, Chenyang
Boon, Chirn Chye
Yi, Xiang
Liang, Zhipeng
Yang, Kaituo
Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS
description This work presents a compact switched-capacitor power detector (PD) with frequency compensation technique in a 65-nm CMOS process. Utilizing self-biased MOSFET as switches, the PD works both at the positive and the negative cycle to increase the dynamic range (DR). The output of traditional power detectors usually change with the variations of input frequencies which make the measurement of PD more difficult. In this design, by adding a feed-forward frequency detection circuit, the load resistors of the power detector are changed according to the input frequencies. Thus, the effect of input frequency variation is minimized. The measured operation frequency of the power detector is from 3 GHz to 5 GHz with a dynamic range of 20 dB with an error of ±2 dB. The variations of the output voltage are reduced from more than 4 dB to ±0.5 dB, achieving a variation of less than ±0.25 dB/GHz. To the authors' knowledge, it is the first power detector with input frequency compensation. The core of the power detector occupies an area of 0.014mm 2 and consumes 2.04mW static power.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Li, Chenyang
Boon, Chirn Chye
Yi, Xiang
Liang, Zhipeng
Yang, Kaituo
format Article
author Li, Chenyang
Boon, Chirn Chye
Yi, Xiang
Liang, Zhipeng
Yang, Kaituo
author_sort Li, Chenyang
title Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS
title_short Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS
title_full Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS
title_fullStr Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS
title_full_unstemmed Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS
title_sort compact switched-capacitor power detector with frequency compensation in 65-nm cmos
publishDate 2020
url https://hdl.handle.net/10356/144725
_version_ 1686109374911610880