Temperature-dependent phase noise properties of a two-section GaSb-based mode-locked laser emitting at 2 μm
The temperature-dependent phase noise properties of a monolithic two-section mode-locked semiconductor laser are first investigated. This is performed on a GaSb-based quantum well laser emitting at ∼2 μm. Stable mode locking operation with a fundamental repetition frequency of ∼13.3 GHz is achieved...
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Main Authors: | , , , , , , , , , |
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格式: | Article |
語言: | English |
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2021
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在線閱讀: | https://hdl.handle.net/10356/145696 |
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