Spintronics based random access memory : a review

• Main Authors: Bhatti, Sabpreet, Sbiaa, Rachid, Hirohata, Atsufumi, Ohno, Hideo, Fukami, Shunsuke, Piramanayagam, S. N.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2021
• Subjects: Science::Physics; Spintronics; Spin Transfer Torque (STT)
• Online Access: https://hdl.handle.net/10356/146755
• Institution: Nanyang Technological University

This article reviews spintronics based memories, in particular, magnetic random access memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale in 2006, the MRAM has grown to a 256 Mb product of Everspin in 2016. During this period, MRAM has overcome several hurdles and ha...