Spintronics based random access memory : a review

• المؤلفون الرئيسيون: Bhatti, Sabpreet, Sbiaa, Rachid, Hirohata, Atsufumi, Ohno, Hideo, Fukami, Shunsuke, Piramanayagam, S. N.
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Science::Physics; Spintronics; Spin Transfer Torque (STT)
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/146755

This article reviews spintronics based memories, in particular, magnetic random access memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale in 2006, the MRAM has grown to a 256 Mb product of Everspin in 2016. During this period, MRAM has overcome several hurdles and ha...