Filamentary physics and modelling in redox-based resistive devices
As we are moving towards a more data-centric and energy-consuming world, there is an increasingly strong need to search for more efficient alternatives in computing memory. Resistive random access memory (RRAM) has been one of the most promising alternatives to existing memories due to its simple...
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| Format: | Thesis-Doctor of Philosophy |
| Language: | English |
| Published: |
Nanyang Technological University
2021
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| Online Access: | https://hdl.handle.net/10356/147065 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | As we are moving towards a more data-centric and energy-consuming world, there is an
increasingly strong need to search for more efficient alternatives in computing memory.
Resistive random access memory (RRAM) has been one of the most promising alternatives to
existing memories due to its simple metal-insulator-metal (MIM) structure, high scalability, low
power, multi-bit characteristics and compatibility to complementary metal oxide semiconductor
(CMOS). An RRAM is made up of two metal electrodes sandwiching a dielectric layer and its
switching process is based on basic redox reactions of oxidation and reduction. Recently, there
have been studies ranging from the high-k materials such as HfOx to the lesser known lower-k
materials such as MgO. This work comprises of conduction mechanism physics, switching
dynamics multi-level resistance states, coupled with modelling for a better understanding and
prediction analysis studies for future 1T1R industrial applications. |
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