Filamentary physics and modelling in redox-based resistive devices
As we are moving towards a more data-centric and energy-consuming world, there is an increasingly strong need to search for more efficient alternatives in computing memory. Resistive random access memory (RRAM) has been one of the most promising alternatives to existing memories due to its simple...
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| Format: | Thesis-Doctor of Philosophy |
| Language: | English |
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Nanyang Technological University
2021
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| Online Access: | https://hdl.handle.net/10356/147065 |
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| Institution: | Nanyang Technological University |
| Language: | English |
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