SiN-SOI multilayer platform for prospective applications at 2 μm

Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a w...

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Main Authors: Sia, Brian Jia Xu, Wang, Wanjun, Guo, Xin, Zhou, Jin, Zhang, Zecen, Li, Xiang, Qiao, Zhong Liang, Liu, Chong Yang, Littlejohns, Callum, Reed, Graham T., Wang, Hong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2021
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Online Access:https://hdl.handle.net/10356/147105
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1471052021-03-26T05:19:10Z SiN-SOI multilayer platform for prospective applications at 2 μm Sia, Brian Jia Xu Wang, Wanjun Guo, Xin Zhou, Jin Zhang, Zecen Li, Xiang Qiao, Zhong Liang Liu, Chong Yang Littlejohns, Callum Reed, Graham T. Wang, Hong School of Electrical and Electronic Engineering Centre for Micro-/Nano-electronics (NOVITAS) Silicon Technologies, Centre of Excellence Engineering::Electrical and electronic engineering Silicon Photonics 2 μm Waveband Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935 - 1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated. Agency for Science, Technology and Research (A*STAR) Nanyang Technological University National Research Foundation (NRF) Published version This work was supported in part by the National Research Foundation Singapore under Grant NRF-CRP12-2013-04 and in part by Nanyang Technological University-A*Start Silicon Technologies Centre of Excellence and NTUCompoundTek Pte Ltd Research Collaboration Agreement (RCA). 2021-03-26T05:19:10Z 2021-03-26T05:19:10Z 2019 Journal Article Sia, B. J. X., Wang, W., Guo, X., Zhou, J., Zhang, Z., Li, X., Qiao, Z. L., Liu, C. Y., Littlejohns, C., Reed, G. T. & Wang, H. (2019). SiN-SOI multilayer platform for prospective applications at 2 μm. IEEE Photonics Journal, 11(6). https://dx.doi.org/10.1109/JPHOT.2019.2952603 1943-0655 0000-0002-2183-6865 0000-0001-8045-2944 0000-0002-7101-0447 https://hdl.handle.net/10356/147105 10.1109/JPHOT.2019.2952603 2-s2.0-85077220838 6 11 en NRF-CRP12-2013-04 IEEE Photonics Journal © 2019 IEEE. This journal is 100% open access, which means that all content is freely available without charge to users or their institutions. All articles accepted after 12 June 2019 are published under a CC BY 4.0 license, and the author retains copyright. Users are allowed to read, download, copy, distribute, print, search, or link to the full texts of the articles, or use them for any other lawful purpose, as long as proper attribution is given. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
Silicon Photonics
2 μm Waveband
spellingShingle Engineering::Electrical and electronic engineering
Silicon Photonics
2 μm Waveband
Sia, Brian Jia Xu
Wang, Wanjun
Guo, Xin
Zhou, Jin
Zhang, Zecen
Li, Xiang
Qiao, Zhong Liang
Liu, Chong Yang
Littlejohns, Callum
Reed, Graham T.
Wang, Hong
SiN-SOI multilayer platform for prospective applications at 2 μm
description Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935 - 1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Sia, Brian Jia Xu
Wang, Wanjun
Guo, Xin
Zhou, Jin
Zhang, Zecen
Li, Xiang
Qiao, Zhong Liang
Liu, Chong Yang
Littlejohns, Callum
Reed, Graham T.
Wang, Hong
format Article
author Sia, Brian Jia Xu
Wang, Wanjun
Guo, Xin
Zhou, Jin
Zhang, Zecen
Li, Xiang
Qiao, Zhong Liang
Liu, Chong Yang
Littlejohns, Callum
Reed, Graham T.
Wang, Hong
author_sort Sia, Brian Jia Xu
title SiN-SOI multilayer platform for prospective applications at 2 μm
title_short SiN-SOI multilayer platform for prospective applications at 2 μm
title_full SiN-SOI multilayer platform for prospective applications at 2 μm
title_fullStr SiN-SOI multilayer platform for prospective applications at 2 μm
title_full_unstemmed SiN-SOI multilayer platform for prospective applications at 2 μm
title_sort sin-soi multilayer platform for prospective applications at 2 μm
publishDate 2021
url https://hdl.handle.net/10356/147105
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