2μm InGaSb/AlGaAsSb 量子阱激光器理想因子的研究 = Investigation on ideality factor of 2 µm InGaSb/AlGaAsSb quantum well laser

• Main Authors: 李翔 Li, Xiang, 汪宏 Wang, Hong, 乔忠良 Qiao, Zhongliang, 张宇 Zhang, Yu, 徐应强 Xu, Yingqiang, 牛智川 Niu, Zhichuan, 佟存柱 Tong, Cunzhu, 刘重阳 Liu, Chongyang
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: Chinese
• Published: 2021
• Subjects: Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics; 半导体激光器 Semiconductor Laser; 理想因子n Ideality Factor n; 单量子阱 Single Quantum Well
• Online Access: https://hdl.handle.net/10356/147478
• Institution: Nanyang Technological University

展示了一种低阈值(~131 A/cm2)2 μm InGaSb/AlGaAsSb单量子阱(Single Quantum Well, SQW)激光器, 并对该激光器的理想因子n进行了研究。激光器的总体理想因子n由中央pn结的理想因子n和n型GaSb衬底与n型金属之间形成的整流结的理想因子n两部分组成。当温度从20 ℃升高到80 ℃时, 激光器的总体理想因子n从4.0降低至3.3。该结果与所使用的理论模型以及独立的GaSb材料整流结(pn结、GaSb/金属结等)理想因子n的数值是相吻合的。2 µm InGaSb/AlGaAsSb single quantum well(SQW) laser with low threshold current density of ~131 A/cm and its ideality factor n was presented. The ideality factors n of the central p-n junction and the n-GaSb/metal junction sum up to be the total ideality factor n of the laser. The total ideality factor n decreases from 4.0 to 3.3 when the temperature was increased from 20 to 80℃. The results are in good agreement with the applied theoretical model as well as the ideality factor n of the individual GaSb -based junctions(p-n junction, GaSb/metal junction etc. ). 2