PIC-integrable, uniformly 056%-tensile strained Ge-on-insulator photodiodes enabled by recessed SiNx stressor

• المؤلفون الرئيسيون: Lin, Yiding, Ma, Danhao, Lee, Kwang Hong, Wen, Rui-Tao, Syaranamual, Govindo, Kimerling, Lionel, Tan, Chuan Seng, Michel, Jurgen
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors; Germanium; Photodetector
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/148609

Mechanical strain engineering has been promising for many integrated photonic applications. However, for the engineering of material electronic bandgap, a trade-off exists between the strain uniformity and the integration compatibility with photonic-integrated circuits (PICs). Herein, we adopted...