Integration of fluorographene trapping medium in MoS₂-based nonvolatile memory device

• Main Authors: Chang, Kai Ping, Abushammala, Haneen, Sahoo, Mamina, Jaffre, Alexandre, Alamarguy, David, Jiang, Yu, Boutchich. Mohamed, Lai, Chao-Sung
• Other Authors: Research Techno Plaza
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Electrical and electronic engineering; Charge Trapping; Electronic Properties; Nonvolatile Memory
• Online Access: https://hdl.handle.net/10356/148926
• Institution: Nanyang Technological University

Graphene and 2D analogs such as transition metal dichalcogenides (TMDCs) have been widely investigated for their tuneable electronic properties. There is a large spectrum of applications of such 2D analogs; for example, non-volatile memory, which is a key building block for future low-power consumer...